PD -95430
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40FPbF
Fast Speed IGBT
Features
Fast: Optimized for medium operat...
PD -95430
INSULATED GATE BIPOLAR
TRANSISTOR
IRG4PC40FPbF
Fast Speed IGBT
Features
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO-247AC package Lead-Free
C
G E
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
VCES = 600V VCE(on) typ. = 1.50V
@VGE = 15V, IC = 27A
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC RθCS RθJA Wt
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
www.irf.com
TO-247AC
Max. 600 49 27 200 200 ± 20 15 160 65 -55 to + 150
300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm)
Units V A
V mJ W
°C
Typ. 0.24 6 (0.21)
Max. 0.77 ...