IRG4IBC20UDPBF

PD -94917A IRG4IBC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features C 2.5kV, 60s insulation voltage … 4.8 mm creapage distance to heatsink VCES = 600V UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Tighter parameter distribution Industry standard Isolated TO-220 FullpakTM G E n-channel VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A outline Lead-Free Benefits Simplified assembly Highest efficiency and power density HEXFREDTM antiparallel Diode minimizes switching losses and EMI Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM Visol VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case… Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. TO-220 FULLPAK Max. 600 11.4 6.0 52 52 6.5 52 2500 ± 20 34 14 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm) Units V A V W °C Thermal Resistance RθJC RθJC RθJA Wt www.ir...