AUIRF1324WL

AUTOMOTIVE GRADE PD - 97676A AUIRF1324WL Features l Advanced Process Technology l Ultra Low On-Resistance l 50% Lower Lead Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * HEXFET® Power MOSFET D V(BR)DSS 24V RDS(on) typ. 1.16m cG max. 1.30m ID (Silicon Limited) 382A S ID (Package Limited) 240A Description Specifically design for automotive applications this Widelead TO262 package part has the advantage of having over 50% lower lead resistance and delivering over 20% lower Rds(on) when compared with a traditional TO-262 package housing the same silicon die. This greatly helps in reducing condition losses, achieving higher current levels or enabling a system to run cooler and have improved efficiency. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive and other applications. G Gate S D G TO-262 WideLead D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for...