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SQD10N30-330H
Vishay Siliconix
Automotive N-Channel 300 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration
TO-252
300 0.330
10 Single
D
FEATURES • TrenchFET® power MOSFET
• Package with low thermal resistance • AEC-Q101 qualified d
• 100 % Rg tested • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
Drain connected to tab
G
S D G Top View
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
S N-Channel MOSFET
TO-252 SQD10N30-330H-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current e Single Pulse Avalanche Energy e
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
L = 0.05 mH TC = 25 °C TC = 125 °C
VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 300 ± 30 10 5 50 16 12.65 4 107 35
-55 to +175
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. 1.5 kΩ resistance in series with the gate.
PCB Mount c
SYMBOL RthJA RthJC
LIMIT 50 1.4
UNIT °C/W
S15-1136-Rev. C, 12-May-15
1
Document Number: 67070
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SQD10N30-330H
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b Dynamic b
VDS VGS(th) IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 30 V
VGS = 0 V VGS = 0 V VGS = 0 V
VDS = 300 V VDS = 300 V, TJ = 125 °C VDS = 300 V, TJ = 175 °C
VGS = 10 V
VDS ≥ 5 V
VGS = 10 V VGS = 10 V VGS = 10 V
ID = 14 A ID = 14 A, TJ = 125 °C ID = 14 A, TJ = 175 °C
VDS = 15 V, ID = 14 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 150 V, ID = 7 A
f = 1 MHz
VDD = 150 V, RL = 21 Ω ID ≅ 7 A, VGEN = 10 V, Rg = 1 Ω
Pulsed Current a Forward Voltage
ISM VSD IF = 25 A, VGS = 0 V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
MIN.
300 3.4
10 -
0.4 -
-
TYP. MAX. UNIT
3.8
0.275 26
4.4
± 100 1 50
250 -
0.330 0.733 1.000
-
V nA μA A Ω S
1749 112 44 31
8 9.6 0.8 10 18 20 8
2190 140 55 47
3 15 28 30 12
pF
nC Ω ns
- 16 0.9 1.5
A V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
S15-1136-Rev. C, 12-May-15
2
Document Number: 67070
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
20 18
SQD10N30-330H
Vishay Siliconix
ID - Drain Current (A)
16
12
8
4
0 0
VGS = 10 V thru 7 V VGS = 6 V
VGS = 5 V
2468 VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
ID - Drain Current (A)
15
12 9 TC = 25 °C
6
3 TC = 125 °C
0 024
TC = - 55 °C 6 8 10
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
gfs - Transconductance (S)
ID - Drain Current (A)
1.0
0.8
0.6 TC = 25 °C
0.4
40 TC = - 55 °C
32 TC = 25 °C
24
16 TC = 125 °C
0.2 TC = 125 °C
TC = - 55 °C
0.0 02468
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
10
8
0 0 3 6 9 12 15 ID - Drain Current (A)
Transconductance
1.00 2400
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.80 0.60 0.40
VGS = 10 V
2000 1600 1200
800
Ciss
0.20
0.00 0
4 8 12 16 ID - Drain Current (A)
20
400
0 0
Crss
Coss
20 40 60 80 VDS - Drain-to-Source Voltage (V)
100
On-Resistance vs.