DatasheetsPDF.com

SQD10N30-330H Dataheets PDF



Part Number SQD10N30-330H
Manufacturers Vishay
Logo Vishay
Description Automotive N-Channel MOSFET
Datasheet SQD10N30-330H DatasheetSQD10N30-330H Datasheet (PDF)

www.vishay.com SQD10N30-330H Vishay Siliconix Automotive N-Channel 300 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration TO-252 300 0.330 10 Single D FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Drain connected to tab G S D G Top View ORDERING INFORMATION Package Lead (Pb)-free and Halo.

  SQD10N30-330H   SQD10N30-330H



Document
www.vishay.com SQD10N30-330H Vishay Siliconix Automotive N-Channel 300 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration TO-252 300 0.330 10 Single D FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Drain connected to tab G S D G Top View ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free S N-Channel MOSFET TO-252 SQD10N30-330H-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current e Single Pulse Avalanche Energy e Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.05 mH TC = 25 °C TC = 125 °C VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 300 ± 30 10 5 50 16 12.65 4 107 35 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. 1.5 kΩ resistance in series with the gate. PCB Mount c SYMBOL RthJA RthJC LIMIT 50 1.4 UNIT °C/W S15-1136-Rev. C, 12-May-15 1 Document Number: 67070 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SQD10N30-330H Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic b VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 30 V VGS = 0 V VGS = 0 V VGS = 0 V VDS = 300 V VDS = 300 V, TJ = 125 °C VDS = 300 V, TJ = 175 °C VGS = 10 V VDS ≥ 5 V VGS = 10 V VGS = 10 V VGS = 10 V ID = 14 A ID = 14 A, TJ = 125 °C ID = 14 A, TJ = 175 °C VDS = 15 V, ID = 14 A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Rg Turn-On Delay Time c td(on) Rise Time c tr Turn-Off Delay Time c td(off) Fall Time c tf Source-Drain Diode Ratings and Characteristics b VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 150 V, ID = 7 A f = 1 MHz VDD = 150 V, RL = 21 Ω ID ≅ 7 A, VGEN = 10 V, Rg = 1 Ω Pulsed Current a Forward Voltage ISM VSD IF = 25 A, VGS = 0 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. MIN. 300 3.4 10 - 0.4 - - TYP. MAX. UNIT 3.8 0.275 26 4.4 ± 100 1 50 250 - 0.330 0.733 1.000 - V nA μA A Ω S 1749 112 44 31 8 9.6 0.8 10 18 20 8 2190 140 55 47 3 15 28 30 12 pF nC Ω ns - 16 0.9 1.5 A V Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1136-Rev. C, 12-May-15 2 Document Number: 67070 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 20 18 SQD10N30-330H Vishay Siliconix ID - Drain Current (A) 16 12 8 4 0 0 VGS = 10 V thru 7 V VGS = 6 V VGS = 5 V 2468 VDS - Drain-to-Source Voltage (V) Output Characteristics 10 ID - Drain Current (A) 15 12 9 TC = 25 °C 6 3 TC = 125 °C 0 024 TC = - 55 °C 6 8 10 VGS - Gate-to-Source Voltage (V) Transfer Characteristics gfs - Transconductance (S) ID - Drain Current (A) 1.0 0.8 0.6 TC = 25 °C 0.4 40 TC = - 55 °C 32 TC = 25 °C 24 16 TC = 125 °C 0.2 TC = 125 °C TC = - 55 °C 0.0 02468 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 10 8 0 0 3 6 9 12 15 ID - Drain Current (A) Transconductance 1.00 2400 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.80 0.60 0.40 VGS = 10 V 2000 1600 1200 800 Ciss 0.20 0.00 0 4 8 12 16 ID - Drain Current (A) 20 400 0 0 Crss Coss 20 40 60 80 VDS - Drain-to-Source Voltage (V) 100 On-Resistance vs.


SQD07N25-350H SQD10N30-330H SQD19P06-60L


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)