SQD07N25-350H

www.vishay.com SQD07N25-350H Vishay Siliconix Automotive N-Channel 250 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package TO-252 250 0.350 7 Single TO-252 D FEATURES TrenchFET® power MOSFET Package with low thermal resistance AEC-Q101 qualified d 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Drain connected to tab G S D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b TC = 25 °C TC = 125 °C ID IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C IAS EAS PD TJ, Tstg LIMIT 250 ± 30 7 4 50 15 7 2.4 71 23 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. PCB Mount c SYMBOL RthJA RthJC LIMIT 50 2.1 UNIT V A mJ W °C UNIT °C/W S15-1874-Rev. C, 10-Aug-15 1 Document Number: 67088 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. TH...