SQ4920EY

www.vishay.com SQ4920EY Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration 30 0.0145 0.0175 8 Dual FEATURES TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 SO-8 D1 D2 S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 G1 5 D2 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SO-8 SQ4920EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 30 ± 20 8 7.2 4 32 25 31 4.4 1.4 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJF LIMIT 110 34 UNIT V A mJ W °C UNIT °C/W S12-1860-Rev. C, 13-Aug-12 1 Document Number: 66724 ...