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PXAC192908FV

Infineon

Thermally-Enhanced High Power RF LDMOS FET


Description
PXAC192908FV Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz Description The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package wit...



Infineon

PXAC192908FV

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