PXAC182908FV

PXAC182908FV Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1805 – 1880 MHz Description The PXAC182908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC182908FV Package H-37275G-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 600 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20 Gain 12 0 8 PAR @ 0.01% CCDF 4 -20 -40 0 25 pxac182908fc_g1 -60 30 35 40 45 50 55 Average Output Power (dBm) Features Broadband internal input and output matching Asymmetrical Doherty design - Main : P1dB = 120 W Typ - Peak : P1dB = 220 W Typ Typical Pulsed CW performance, 1842.5 MHz, 28 V, combined outputs - Output power at P1dB = 240 W - Efficiency = 52.6% - Gain = 14.5 dB Capable of handling 10:1 VSWR @28 V, 240 W (CW) output power Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001) Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture) VDD = 28 V, IDQ = 600 mA, VGSPEAK ...