FR16B02

Silicon Fast Recovery Diode Features High Surge Capability Types from 100 V to 600 V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. FR16B02 thru FR16JR02 VRRM = 100 V - 600 V IF = 16 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions FR16B(R)02 FR16D(R)02 FR16G(R)02 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage VRRM VRMS VDC 100 200 400 70 140 280 100 200 400 Continuous forward current IF TC ≤ 100 °C 16 16 16 FR16J(R)02 Unit 600 V 420 V 600 V 16 A Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.3 ms Tj Tstg 225 -55 to 150 -55 to 150 225 -55 to 150 -55 to 150 225 -55 to 150 -55 to 150 225 -55 to 150 -55 to 150 A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions FR16B(R)02 FR16D(R)02 Diode forward voltage Reverse current Recovery Time Maximum reverse recovery time Thermal characteristics Thermal resistance, junction - case VF IF = 16 A, Tj = 25 °C IR VR = 100 V, Tj = 25 °C VR = 100 V, Tj = 150 °C TRR IF=0.5 A, IR=1.0 A, IRR= 0.25 A RthJC 0.9 25 6 200 1.5 0.9 25 6 200 1.5 FR16G(R)02 0.9 25 6 200 1.5 FR16J(R)02 0.9 25 6 Unit V μA mA 250 nS 1.5 °C/W www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 1 FR16B02 ...