FR6J05

Silicon Fast Recovery Diode Features High Surge Capability Types from 600 V to 1000 V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. FR6J05 thru FR6MR05 VRRM = 600 V - 1000 V IF = 6 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions FR6J(R)05 FR6K(R)05 FR6M(R)05 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 100 °C 600 420 600 6 800 1000 560 700 800 1000 66 Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 135 135 135 Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions FR6J(R)05 Diode forward voltage Reverse current Recovery Time Maximum reverse recovery time Thermal characteristics Thermal resistance, junction - case VF IF = 6 A, Tj = 25 °C IR VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 150 °C TRR IF=0.5 A, IR=1.0 A, IRR= 0.25 A RthJC 1.4 25 6 500 2.5 FR6K(R)05 1.4 25 6 500 2.5 FR6M(R)05 1.4 25 6 500 2.5 Unit V V V A A °C °C Unit V μA mA nS °C/W www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 1 FR6J05 thru FR6MR05 www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 2 FR6J05 thru FR...