FR85K05

Silicon Fast Recovery Diode Features High Surge Capability Types from 800 V to 1000 V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. FR85K05 thru FR85MR05 VRRM = 800 V - 1000 V IF = 85 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions FR85K(R)05 FR85M(R)05 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 100 °C 800 560 800 85 1000 700 1000 85 Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.3 ms Tj Tstg 1369 -55 to 150 -55 to 150 1369 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions FR85K(R)05 Diode forward voltage Reverse current Recovery Time Maximum reverse recovery time VF IF = 85 A, Tj = 25 °C IR VR = 100 V, Tj = 25 °C VR = 100 V, Tj = 125 °C TRR IF=0.5 A, IR=1.0 A, IRR= 0.25 A 1.3 25 20 500 FR85M(R)05 1.3 25 20 500 Unit V V V A A °C °C Unit V μA mA nS www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 1 FR85K05 thru FR85MR05 www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 2 FR85K05 thru FR85MR05 Package dimensions and terminal configuration Product is marked with part number and terminal configuration. M DO- 5 (DO-203AB) J K P D G...