1N4594R

Silicon Standard Recovery Diode Features High Surge Capability Types from 1000 V to 1400 V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N4594(R) thru 1N4596(R) VRRM = 1000 V - 1400 V IF =150 A DO-8 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N4594(R) 1N4595(R) 1N4596(R) Repetitive peak reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave I2t for fusing Operating temperature Storage temperature VRRM VDC IF IF,SM I2t Tj Tstg TC ≤ 110 °C TC = 25 °C, tp = 8.3 ms 60 Hz Half wave 1000 1000 150 3000 37200 -55 to 150 -55 to 150 1200 1200 150 3000 37200 -55 to 150 -55 to 150 1400 1400 150 3000 37200 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N4594(R) Diode forward voltage Reverse current VF IF = 150 A, Tj = 110 °C IR VR = VRRM, Tj = 110 °C 1.5 4.5 Thermal characteristics Thermal resistance, junction case RthJC 0.35 1N4595(R) 1.5 4 0.35 1N4596(R) 1.5 3.5 0.35 Unit V V A A A2sec °C °C Unit V mA °C/W www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 1N4594(R) thru 1N4596(R) www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2 1N4594(R) thru 1N4596(R) Package dimensions and terminal configuration Product is marked ...