Document
Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 700 V to 1000 V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N3765 thru 1N3768R
VRRM = 700 V - 1000 V IF = 35 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 140 °C TC = 25 °C, tp = 8.3 ms
700 800 900 490 560 630 700 800 900 35 35 35
475 475 475
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
1000 700 1000 35
475
-55 to 150 -55 to 150
Unit
V V V A
A
°C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Unit
Diode forward voltage
VF IF = 35 A, Tj = 25 °C 1.2 1.2 1.2 1.2 V
Reverse current
IR
VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 140 °C
10 10
10 10
10 10
10 μA 10 mA
Thermal characteristics
Thermal resistance, junction case
RthJC
0.25 0.25 0.25 0.25 °C/W
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1N3765 thru 1N3768R
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1N3765 thru 1N3768R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration. M DO- 5 (DO-203AB)
J K
P D
G
FE
C
A
B N
Inches
Millimeters
Min A B 0.669 C ----D ----E 0.422 F 0.115 G ----J ----K 0.236 M ----N ----P 0.140
Max Min
1/4 –28 UNF
0.687
17.19
0.794
-----
1.020
-----
0.453
10.72
0.200
2.93
0.460
-----
0.280
-----
----- 6.00
0.589
-----
0.063
-----
0.175
3.56
Max
17.44 20.16 25.91 11.50 5.08 11.68 7.00 ----14.96 1.60 4.45
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