Document
NTMD4102PR2
Product Preview Trench Power MOSFET
-20 V, P-Channel, SO-8 Dual
This P-Channel device was designed using ON Semiconductor’s leading edge trench technology for low RDS(on) performance in the SO-8 dual package for high power and current handling capability. The low RDS(on) performance is particularly suited for game systems, notebook and desktop computers, and printers.
Features & Benefits
• Leading -20 V Trench for Low RDS(on) • SO-8 Package Provides Excellent Thermal Performance • Surface Mount SO-8 Package Saves Board Space • Pb Free Package for Green Manufacturing
Applications
• Load/Power Management • Battery Switching for Multi Cell Li-Ion • Buck-Boost Synchronous Rectification
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous @ TA = 25°C (Note 1) - Pulsed Drain Current (t = 10 µs)
Steady State Power Dissipation @ TA = 25°C (Note 1)
Operating Junction and Storage Temperature Range
VDSS VGS
ID IDM PD
TJ, Tstg
-20 ±20
-6.5 -30 1.1
-55 to 150
V V A
W °C
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 seconds)
IS -0.9 A TL 260 °C
THERMAL RESISTANCE RATINGS
Thermal Resistance - Junction- to- Ambient - Steady State (Note 1) - Junction-to-Ambient - t ≤ 10 s (Note 1) - Junction-to-Lead - Steady State (Note 2)
RqJA RqJA RqJL
TBD TBD TBD
°C/W
1. Surface-mounted on FR4 board using 1″ sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq)
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.
http://onsemi.com
VBR(DSS) = -20 VOLTS RDS(on) (max) = 19 mW @ -10 V
ID(max) (Note 1) = -8.5 A RDS(on) (max) = 30 mW @ -4.5 V
ID(max) (Note 1) = -6.5 A
P-Channel MOSFET S
G
D
MARKING DIAGRAM & PIN ASSIGNMENT
8
1
SO-8 CASE 751 STYLE 12
Source-1 Gate-1
Source-2 Gate-2
XXXXXX ALYW
18 Drain-1 Drain-1
Drain-2 Drain-2
Top View
XXX A L Y W
= Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTMD4102PR2
SO-8
2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 0
1
Publication Order Number: NTMD4102PR2/D
NTMD4102PR2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 V, ID = 250 mA)
Zero Gate Voltage Drain Current (Note 3) (VGS = 0 V, VDS = -16 V)
Gate-to-Source Leakage Current (VGS = ±20 V, VDS = 0 V)
ON CHARACTERISTICS
Gate Threshold Voltage (Note 3) (VGS = VDS, ID = -250 mA)
Drain-to-Source On-Resistance
(VGS = -10 V, ID = -8.5 A) (VGS = -4.5 V, ID = -6.5 A)
Forward Transconductance (VDS = -10 V, ID = -8.4 A)
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance Output.