DatasheetsPDF.com

NTMD4102PR2 Dataheets PDF



Part Number NTMD4102PR2
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Trench Power MOSFET
Datasheet NTMD4102PR2 DatasheetNTMD4102PR2 Datasheet (PDF)

NTMD4102PR2 Product Preview Trench Power MOSFET -20 V, P-Channel, SO-8 Dual This P-Channel device was designed using ON Semiconductor’s leading edge trench technology for low RDS(on) performance in the SO-8 dual package for high power and current handling capability. The low RDS(on) performance is particularly suited for game systems, notebook and desktop computers, and printers. Features & Benefits • Leading -20 V Trench for Low RDS(on) • SO-8 Package Provides Excellent Thermal Performance • S.

  NTMD4102PR2   NTMD4102PR2



Document
NTMD4102PR2 Product Preview Trench Power MOSFET -20 V, P-Channel, SO-8 Dual This P-Channel device was designed using ON Semiconductor’s leading edge trench technology for low RDS(on) performance in the SO-8 dual package for high power and current handling capability. The low RDS(on) performance is particularly suited for game systems, notebook and desktop computers, and printers. Features & Benefits • Leading -20 V Trench for Low RDS(on) • SO-8 Package Provides Excellent Thermal Performance • Surface Mount SO-8 Package Saves Board Space • Pb Free Package for Green Manufacturing Applications • Load/Power Management • Battery Switching for Multi Cell Li-Ion • Buck-Boost Synchronous Rectification MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous @ TA = 25°C (Note 1) - Pulsed Drain Current (t = 10 µs) Steady State Power Dissipation @ TA = 25°C (Note 1) Operating Junction and Storage Temperature Range VDSS VGS ID IDM PD TJ, Tstg -20 ±20 -6.5 -30 1.1 -55 to 150 V V A W °C Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 seconds) IS -0.9 A TL 260 °C THERMAL RESISTANCE RATINGS Thermal Resistance - Junction- to- Ambient - Steady State (Note 1) - Junction-to-Ambient - t ≤ 10 s (Note 1) - Junction-to-Lead - Steady State (Note 2) RqJA RqJA RqJL TBD TBD TBD °C/W 1. Surface-mounted on FR4 board using 1″ sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq) This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. http://onsemi.com VBR(DSS) = -20 VOLTS RDS(on) (max) = 19 mW @ -10 V ID(max) (Note 1) = -8.5 A RDS(on) (max) = 30 mW @ -4.5 V ID(max) (Note 1) = -6.5 A P-Channel MOSFET S G D MARKING DIAGRAM & PIN ASSIGNMENT 8 1 SO-8 CASE 751 STYLE 12 Source-1 Gate-1 Source-2 Gate-2 XXXXXX ALYW 18 Drain-1 Drain-1 Drain-2 Drain-2 Top View XXX A L Y W = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week ORDERING INFORMATION Device Package Shipping NTMD4102PR2 SO-8 2500/Tape & Reel © Semiconductor Components Industries, LLC, 2003 March, 2003 - Rev. 0 1 Publication Order Number: NTMD4102PR2/D NTMD4102PR2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 V, ID = 250 mA) Zero Gate Voltage Drain Current (Note 3) (VGS = 0 V, VDS = -16 V) Gate-to-Source Leakage Current (VGS = ±20 V, VDS = 0 V) ON CHARACTERISTICS Gate Threshold Voltage (Note 3) (VGS = VDS, ID = -250 mA) Drain-to-Source On-Resistance (VGS = -10 V, ID = -8.5 A) (VGS = -4.5 V, ID = -6.5 A) Forward Transconductance (VDS = -10 V, ID = -8.4 A) CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output.


NS6A64AFT3G NTMD4102PR2 NTS245ESF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)