NXH80T120L2Q0SG

NXH80T120L2Q0PG, NXH80T120L2Q0SG T-Type, Neutral Point Clamp Module This high−density, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes for sine wave inverter applications. Features Extremely Efficient Trench IGBT with Fieldstop Technology Module Design Offers High Power Density Low Inductive Layout Q0PACK Package with Press−Fit Pins Typical Applications Solar Inverters Uninterruptable Power Supplies ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit BRIDGE IGBT Collector−emitter voltage Collector current Th = 80°C Pulsed Collector Current, Tpulse Limited by Tjmax Gate−emitter voltage Power Dissapation per IGBT Tj = Tjmax Th = 80°C Short Circuit Withstand Time VGE = 15 V, VCE = 600 V, TJ ≤ 150°C NEUTRAL POINT IGBT VCES IC ICM VGE Ptotal TSC 1200 65 260 ±20 146 10 V A A V W ms Collector−emitter voltage (Bridge) VCES 600 V Collector current @ Th = 80°C IC 59 A Pulsed Collector Current, Tpulse Limited ICM 235 A by Tjmax Gate−emitter voltage VGE ±20 V Power Dissapation per IGBT Ptotal 66 W Tj = Tjmax Th = 80°C Short Circuit Withstand Time VGE = 15 V, VCE = 400 V, TJ ≤ 150°C TSC 5 ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 80 A, 1200 V (Bridge) 50 A, 600 V (Neutral Point Clamp) T – Type Neutral Point C...