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MAC223A8

ON Semiconductor

Triacs

MAC223A6, MAC223A8, MAC223A10 Triacs Preferred Device Silicon Bidirectional Thyristors Designed primarily for full-w...


ON Semiconductor

MAC223A8

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MAC223A6, MAC223A8, MAC223A10 Triacs Preferred Device Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power supplies; or wherever full−wave silicon−gate−controlled devices are needed. Off−State Voltages to 800 Volts All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Thermal Resistance and High Heat Dissipation Gate Triggering Guaranteed in Four Modes Device Marking: Logo, Device Type, e.g., MAC223A6, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage(1) (TJ = −40 to 125°C, Sine Wave 50 to 60 Hz, Gate Open) MAC223A6 MAC223A8 MAC223A10 VDRM, VRRM Volts 400 600 800 On−State Current RMS Full Cycle Sine Wave 50 to 60 Hz (TC = 80°C) Peak Non−repetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C) Preceded and followed by rated current IT(RMS) ITSM 25 250 A A Circuit Fusing (t = 8.3 ms) I2t 260 A2s Peak Gate Current (t v 2.0 μsec; TC = +80°C) IGM 2.0 A Peak Gate Voltage (t v 2.0 μsec; TC = +80°C) Peak Gate Power (t v 2.0 μsec; TC = +80°C) VGM PGM "10 20 Volts Watts Average Gate Power (TC = 80°C, t = 8.3 ms) PG(AV) 0.5 Watts Operating Junction Temperature Range Storage Temperature Range Mounting Torque TJ −40 to 125 °C Tstg − 40 to 150 °C — 8.0 in. lb. (1) VDRM and VRRM for all types can be applie...




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