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PMEG6030ELP

NXP

3A low leakage current Schottky barrier rectifier

SOD128 PMEG6030ELP 60 V, 3 A low leakage current Schottky barrier rectifier 7 May 2015 Product data sheet 1. Genera...


NXP

PMEG6030ELP

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SOD128 PMEG6030ELP 60 V, 3 A low leakage current Schottky barrier rectifier 7 May 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Extremely low leakage current IR = 340 nA Average forward current: IF(AV) ≤ 3 A Reverse voltage: VR ≤ 60 V Low forward voltage VF = 600 mV High power capability due to clip-bonding technology High temperature Tj ≤ 175 °C Small and flat lead SMD plastic package AEC-Q101 qualified 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications 4. Quick reference data Table 1. Symbol IF(AV) VR VF Quick reference data Parameter average forward current reverse voltage forward voltage IR reverse current Conditions δ = 0.5; f = 20 kHz; Tsp ≤ 155 °C; square wave Tj = 25 °C IF = 3 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C VR = 60 V; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C Min Typ Max Unit - - 3A - - 60 V - 600 670 mV - 340 1000 nA Scan or click this QR code to view the latest information for this product NXP Semiconductors PMEG6030ELP 60 V, 3 A low leakage current Schottky barrier rectifier 5. Pinning information Table 2. Pin 1 2 Pinning information Symbol Description K cathode[1]...




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