PMDXB550UNE

DFN1010B- 6 PMDXB550UNE 30 V, dual N-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Exposed drain pad for excellent thermal conduction 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C Static characteristics (per transistor) RDSon drain-source on-state VGS = 4.5 V; ID = 590 mA; Tj = 25 °C resistance [1] Min Typ Max Unit --8 -- 30 V 8V 590 mA - 550 670 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Scan or click this QR code to view the latest information for this product NXP Semiconductors PMDXB550UNE 30 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drai...