CHA5115-99F

CHA5115-99F RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB gain compression. This device is manufactured using 0.25µm Power pHEMT process, including, via holes through the substrate and air bridges. It is available in chip form. IN Vg Vd1 Vd2 OUT Main Features  0.25µm Power pHEMT Technology  Frequency band: 8-12GHz  Output power: 29dBm @ 3dBcomp  Linear gain: 25dB  High PAE: 39% @ 3dBcomp  Noise Factor: 5dB typ.  Quiescent bias point: Vd=8V, Id=0.19A  Chip size: 2.37x1.82x0.07mm Pout (dBm) & PAE(%) & Gain(dB) 44 PAE @ 3dB comp 42 40 38 36 34 32 Pout @ 3dB comp 30 28 26 Linear Gain 24 22 20 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (GHz) Main Characteristics Tamb =+25°C, Vd =8V, Id (Quiescent) =190mA, Drain Pulse width =100µs, Duty cycle = 20% Symbol Parameter Min Typ Max Unit Fop Operating frequency range 8 12 GHz PAE_P-3dB P-3dB Power added efficiency @ 3dB comp Output power @ 3dB comp 39 % 29 dBm Ref. : DSCHA51154120 - 30 Apr 14 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5115-99F X-band Medium Power Amplifie...