CHA4250-QDG
5.5-11GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA4250-QDG is a three stages monolithic GaAs medium power amplifier circuit.
It is designed for commercial communication systems. The circuit is manufactured with a pHEMT process, 0.5µm gate length.
Main Features
■ Broadband performances: 5.5-11GHz ■ 26dB Linear Gain ■ 23.5dBm output power @1dB comp. ■ 31dBm output TOI ■ 25% PAE@ 1dB compression ■ DC bias: Vd=7Volt@Id=125mA ■ 24L-QFN4x4
Gain & Return Losses (dB)
30 25 20 15 10
5 0 -5 -10 -15 -20 -25 -30
2
Gain & RLoss
S11 S21 S22
7 12 Frequency (GHz)
17
22
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
OTOI Output TOI
Pout Output Power @1dB comp.
Min Typ Max Unit 5.5 11.0 GHz
26.0 dB 31.0 dBm 23.5 dBm
Ref. : DSCHA4250-QDG3021 - 21 Jan 13
1/14 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA4250-QDG
5.5-11GHz Medium Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd1=Vd2=Vd3 =+7.0V
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
5.5 11 GHz
Gain Linear Gain
26 dB
RL_in Input Return Loss
-12 dB
RL_out Output Return Loss
-10 dB
OP1dB Output power @1dB compression
23.5 dBm
Psat Saturated output power
25 dBm
OIP3 Output IP3
31 dBm
PAE Power Added Efficiency @ 1dB compression 25 %
NF Noise figure
7 dB
Idq Quiescent Drain current
125 mA
Vg Gate voltage
-0.45
V
These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board".
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd1,2,3 Drain bias voltage
7.5V
V
Idq Drain bias quiescent current
0.25 A
Vg Gate bias voltage
-2 to +0
V
Pin Input continuous power
4 dBm
Tj Junction temperature
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C Symbol Pad No
Vd1 12 Vd2 9 Vd3 7 Vg 22
Parameter DC Drain voltage 1st stage DC Drain voltage 2nd stage DC Drain voltage 3rd stage
DC Gate voltage tuned for Idq= 125mA
Values 7 7 7
-0.45
Unit V V V V
Ref. : DSCHA4250-QDG3021 - 21 Jan 13
2/14 Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.5-11GHz Medium Power Amplifier
CHA4250-QDG
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature cannot be maintained below the maximum temperature specified (see the curve Pdiss. Max) in order to guarantee the nominal device life time (MTTF).
DEVICE THERMAL SPECIFICATION : CHA4250-QDG
Recommended max. junction temperature (Tj max)
: 154 °C
Junction temperature absolute maximum rating
: 175 °C
Max. continuous dissipated power (Pdiss. Max.)
: 0.9 W
=> Pdiss. Max. derating above Tcase(1)= 85 °C :
13 mW/°C
Junction-Case thermal resistance (Rth J-C)(2)
: <79 °C/W
Minimum Tcase operating temperature(3)
: -40 °C
Maximum Tcase operating temperature(3)
: 85 °C
Minimum storage temperature
: -55 °C
Maximum storage temperature
: 150 °C
(1) Derating at junctio n temperature co nstant = Tj max. (2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased.
(3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w).
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Pdiss. Max. @Tj