CHA4107-99F

CHA4107-99F 4.5-6.5GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA4107-99F is a monolithic two stage power amplifier designed for C-Band applications. The MPA provides typically 26dBm output power associated to 35% power added efficiency at 3dBcomp. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. IN Vg Vd1 Vd2 OUT Main Features ■ Frequency band: 4.5-6.5GHz ■ 26dBm @ 3dBcomp ■ 24.5 dB Linear Gain ■ High PAE: 35% for +5dBm input power ■ DC bias: Vd=8V@Id=115mA ■ Chip size 2.37x1.5x0.07mm Main Characteristics Vd = 8V, Id (Quiescent) = 115 mA, Drain Pulse width = 45µs, Duty cycle = 12% Symbol Parameter Min Typ Max Freq Frequency range 4.5 6.5 Gain Linear Gain 24.5 NF Noise Figure 5 Pout Output Power @ 3dB comp. 26 Unit GHz dB dB dBm Ref. : DSCHA41074188 - 07 Jul 14 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA4107-99F 4.5-6.5GHz Medium Power Amplifier Electrical Characteristics Vd = 8V, Id (Quiescent) = 115 mA, Drain Pulse width = 45µs, Duty cycle = 12% Symbol Parameter Min Typ Max Freq Frequency range 4.5 6.5 Gain Linear Gain 24.5 NF Noise Figure 5 RLin Input Return Loss 13 RLout Outpu...