CHA3801-99F

CHA3801-99F RoHS COMPLIANT L-Band Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3801-99F is an L-Band LNA monolithic circuit including an active bias network. Furthermore a protection network is included in order to allow high input power survivability. The circuit is dedicated to space applications, and also well suited for a range of microwave applications and systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ L-Band performances: 1-2GHz ■ 1.45dB Noise Figure ■ 28dB Linear Gain ■ 17dBm Saturated Power ■ 27dBm Output Third Order Intercept ■ DC bias: Vd = 5Volt @ 70mA ■ Chip size 1.6x1.4x0.1mm Typical Noise Figure Main Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB comp. Min Typ Max Unit 1 2 GHz 28 dB 1.45 dB 15 dBm Ref. : DSCHA38012328 - 23 Nov 12 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA3801-99F L-Band Low Noise Amplifier Main Characteristics Tamb.= +25°C Symbol Parameter Min FRF RF input frequency Range G (1) Gain - Gain flatness (1) 1 |S11| Input Return Loss |S22| Output Return Loss NF ** Noise Figure |S12| Reverse Isolation ...