CHA3666-FAA

CHA3666-FAA 6-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3666-FAA is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is proposed in leadless surface mount hermetic metal ceramic 6x6mm² package. The overall power supply is of 4V/80mA. The circuit is dedicated to space applications and also well suited for a wide range of microwave and millimetre wave applications and systems. UMS A3666 YYWW Main Features ■ Broadband performance 6-16GHz ■ 1.8dB typical Noise Figure ■ 24dBm 3rd order intercept point ■ 16dBm power at 1dB compression ■ 21dB gain ■ Low DC power consumption ■ 6x6mm² metal ceramic hermetic package Linear Gain (dB) 30 25 20 15 10 +25 C +85 C -40 C 5 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 16 GHz NF Noise figure 1.8 2.5 dB G Small signal Gain 18.5 21 dB IP3 3rd order intercept point 24 dBm ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSCHA3666-FAA2356 - 21 Dec 12 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - Franc...