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CHA3665-QAG Dataheets PDF



Part Number CHA3665-QAG
Manufacturers United Monolithic Semiconductors
Logo United Monolithic Semiconductors
Description 5-21GHz Driver Amplifier
Datasheet CHA3665-QAG DatasheetCHA3665-QAG Datasheet (PDF)

UMS A368687A YYWWG CHA3665-QAG RoHS COMPLIANT UMS A366878A YYWWG 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3665-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a power pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It.

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UMS A368687A YYWWG CHA3665-QAG RoHS COMPLIANT UMS A366878A YYWWG 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3665-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a power pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. YAYU3WY6MYA68WUW378SMYW6AA6YSGU35W6M68W78SAG UMS A368687A YYWWG Main Features ■ Broadband performances: 5-21GHz ■ 20.5dBm saturated output power ■ 15dB gain ■ DC bias: Vd=5Volt @ Id=120mA ■ 16L-QFN3x3 ■ MSL1 Main Characteristics Tamb.= +25°C, Vd = +5.0V Symbol Parameter Freq Frequency range Gain Linear Gain Pout-1dB Output Power @1dB gain compression Psat Saturated Output Power Id Drain current Min Typ Max Unit 5 21 GHz 12.5 15 dB 17.5 19.5 dBm 19 20.5 dBm 120 mA Ref. : DSCHA3665-QAG2258 - 14 Sep 12 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3665-QAG 5-21GHz Driver Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +5.0V Symbol Parameter Min Typ Max Unit Freq Frequency range 5 21 GHz Gain Linear Gain 12.5 15 dB Pout-1dB Output Power @1dB gain compression 17.5 19.5 dBm Psat Saturated Output Power 19 20.5 dBm C/I3 C/I3 @ Pin/tone = -8dBm , Vd = 5V 5.0 to 7.5GHz 40 dBc 7.5 to 16.5GHz 16.5 to 20GHz 34 dBc 33 dBc dBS11 Input Return Loss -8 -6 dB dBS22 Output Return Loss -10 -8 dB NF Noise Figure 6 dB Vd Drain supply voltage 5V Id Drain current 120 mA These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 6.0 V Id Drain bias current 175 mA Vg Gate bias voltage -2 to +0.4 V Ig Gate bias current +0.7 mA Vgd Maximum negative gate drain Voltage (Vd-Vg/2) (an array of resistor divides gate voltage by 2) 8 V Pin Maximum continuous input power +10 dBm Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. Typical Bias Conditions Tamb.= +25°C Symbol Pad No Parameter Vd 15 Drain voltage Vg 6 Gate voltage Gate voltage is tuned to obtain 120mA drain current. Vg can be either negative or positive supply bias. Values +5.0 -1 to +0.4 Unit V V Ref. : DSCHA3665-QAG2258 - 14 Sep 12 2/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 5-21GHz Driver Amplifier CHA3665-QAG Device thermal performances All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below than the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement. A derating must be applied on the dissipated power if the Tcase temperature can not be maintained below than the maximum temperature specified (see the curve Pdiss. Max) in order to guarantee the nominal device life time (MTTF). DEVICE THERMAL SPECIFICATION : CHA3665-QAG Recommended max. junction temperature (Tj max) : 166 °C Junction temperature absolute maximum rating : 175 °C Max. continuous dissipated power (Pdiss. Max.) : 0.6 W => Pdiss. Max. derating above Tcase(1)= 85 °C : 7 mW/°C Junction-Case thermal resistance (Rth J-C)(2) : <135 °C/W Minimum Tcase operating temperature(3) : -40 °C Maximum Tcase operating temperature(3) : 85 °C Minimum storage temperature : -55 °C Maximum storage temperature : 150 °C (1) Derating at junctio n temperature co nstant = Tj max. (2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased. (3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w). 0.7 Tcase 0.6 Pdiss. Max. @Tj


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