UMS A368687A YYWWG
CHA3565-QAG
RoHS COMPLIANT
UMS A366878A YYWWG
5-21GHz Driver Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3565-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a power pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package.
YAYU3WY6MYA68WUW378SMYW5AA6YSGU35W6M68W78SAG
Sij & NF (dB)
UMS A368687A YYWWG
Main Features
■ Broadband performances: 5-21GHz ■ 20.5dBm saturated output power ■ 15dB gain ■ DC bias: Vd=5Volt @ Id=120mA ■ 16L-QFN3x3 ■ MSL1
20 15 10
5 0 -5 -10 -15 -20 -25 -30
2
Gain, return losses & NF (dB)
S21 S11 S22 NF
4 6 8 10 12 14 16 18 20 22 24 26 28 30 Frequency (GHz)
Main Characteristics
Tamb.= +25°C, Vd = +5.0V
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
Pout-1dB Output Power @1dB gain compression
Psat Saturated Output Power
Id Drain current
Min Typ Max Unit
5 21 GHz
12.5 15
dB
17.5 19.5
dBm
19 20.5
dBm
120 mA
Ref. : DSCHA3565-QAG3199 - 18 Jul 13
1/14 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA3565-QAG
5-21GHz Driver Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +5.0V
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
5 21 GHz
Gain Linear Gain
12.5 15
dB
Pout-1dB Output Power @1dB gain compression
17.5 19.5
dBm
Psat Saturated Output Power
19 20.5
dBm
C/I3 C/I3 @ Pin/tone = -8dBm , Vd = 5V
5.0 to 7.5GHz
40 dBc
7.5 to 16.5GHz 16.5 to 20GHz
34 dBc 33 dBc
dBS11 Input Return Loss
-8 -6 dB
dBS22 Output Return Loss
-10 -8 dB
NF Noise Figure
6 dB
Vd Drain supply voltage
5V
Id Drain current
120 mA
These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board".
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage
6.0 V
Id Drain bias current
175 mA
Vg Gate bias voltage
-2 to +0.4
V
Ig Gate bias current
+0.7
mA
Vgd
Maximum negative gate drain Voltage (Vd-Vg/2) (an array of resistor divides gate voltage by 2)
8
V
Pin Maximum continuous input power
+10 dBm
Tj Junction temperature
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C Symbol Pad No
Parameter
Vd 13 Drain voltage
Vg 5 Gate voltage
Gate voltage is tuned to obtain 120mA drain current.
Vg can be either negative or positive supply bias.
Values +5.0
-1 to +0.4
Unit V V
Ref. : DSCHA3565-QAG3199 - 18 Jul 13
2/14 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5-21GHz Driver Amplifier
CHA3565-QAG
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below than the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be maintained below than the maximum temperature specified (see the curve Pdiss. Max) in order to guarantee the nominal device life time (MTTF).
DEVICE THERMAL SPECIFICATION : CHA3565-QAG
Recommended max. junction temperature (Tj max)
: 166 °C
Junction temperature absolute maximum rating
: 175 °C
Max. continuous dissipated power (Pdiss. Max.)
: 0.6 W
=> Pdiss. Max. derating above Tcase(1)= 85 Junction-Case thermal resistance (Rth J-C)(2)
°C : :
7 mW/°C <135 °C/W
Minimum Tcase operating temperature(3)
: -40 °C
Maximum Tcase operating temperature(3)
: 85 °C
Minimum storage temperature
: -55 °C
Maximum storage temperature
: 150 °C
(1) Derating at junctio n temperature co nstant = Tj max.
(2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased.
(3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w).
0.7 Tcase
0.6
Pdiss. Max. @Tj