CHA3218-99F

CHA3218-99F RoHS COMPLIANT 2-18GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3218-99F is a two stage very wide band Low Noise Amplifier. The wide frequency band associated to a 2dB low noise figure makes this circuit very versatile for very high performance systems. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vg1 Vg2 Vd1 Vd2 IN OUT Main Features ■ Broadband performances: 2-18GHz ■ Noise figure : 2dB ■ Output power: 15dBm @ 1dBcomp ■ Linear gain: 24dB ■ High linearity: 25dBm ■ Quiescent bias point: Vd=4V, Id=120mA ■ Chip size 3.07x1.57x0.1mm Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB comp. Min Typ Max Unit 2 18 GHz 24 dB 2 dB 15 dBm Ref. : DSCHA32181157 - 06 Jun 11 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA3218-99F 2-18GHz Low Noise Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +4V Symbol Parameter Min Typ Max Unit Freq Operating frequency 2 18 GHz G Small Signal Gain 24 dB Input Return Loss from 2GHz to 16GHz S11 Input ...