CHA3090-98F

CHA3090-98F 81-86GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3090-98F is a three-stage monolithic Medium Power Amplifier. This circuit includes a power detector which integrates a directional coupler, a detection diode and a reference diode to be used in differential mode. It is dedicated to E-band telecommunication, particularly well suited for the new generation of high capacity Backhaul. The circuit is manufactured with a pHEMT process, 0.1µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form with BCB layer protection. Vd1 IN Vg1 Vd2h Vd3h Vg3h OUT Vg2 Vg3b Vd2b Vd3b Vdet Vref Dc Functional diagram Pout @ 1dB comp & 3dB comp (dBm) Linear Gain (dB) Main Features ■ Broadband performances: 81-86GHz ■ 13dB linear gain ■ 17dBm power at 1dB compression ■ 20dB power detector dynamic range ■ BCB layer protection ■ DC bias: Vd=3.5V@Id=280mA ■ Chip size 3.36x1.78x0.07mm 22 20 18 16 14 12 10 8 6 79 Output Power (dBm) and Linear Gain (dB) P-1dB P-3dB S21 80 81 82 83 84 85 86 87 Frequency (GHz) 24 22 20 18 16 14 12 10 8 88 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 81 86 GHz Gain Linear Gain 13 dB P1dB Output Power @1dB comp. 17 dBm Psat Saturated Output Power 19 dBm Dr Detection dynamic range (for output power detection up to Psat) 20 dB Ref. : DSCHA30903245 - 02 Sep 13 1/12 Specificatio...