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CHA2260-QAG

United Monolithic Semiconductors

18-27GHz Low Noise Amplifier

UMS A368687A YYWWG CHA2260-QAG UMS A366878A YYWWG 18-27GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD le...


United Monolithic Semiconductors

CHA2260-QAG

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Description
UMS A368687A YYWWG CHA2260-QAG UMS A366878A YYWWG 18-27GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2260-QAG is a low noise amplifier monolithic circuit, which integrates 3-stages self biased. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length. It is supplied in RoHS compliant SMD package. YAYU3WY6MYA68WUW278SMYW2AA6YSGU30W6M68W78SAG NF (dB) UMS A368687A YYWWG Main Features ■ Broadband performance: 18-27GHz ■ 26dB Gain ■ 2.2dB Noise Figure ■ 13dBm Pout ■ 23dBm Output IP3 ■ DC bias: Vd=3.5Volt@Id=65mA ■ 16L-QFN3x3 ■ MSL1 Noise Figure 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 3.0 V 3.5 V 1.2 20 21 22 23 24 25 26 27 28 29 30 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB comp. Min Typ Max Unit 18 27 GHz 26 dB 2.2 dB 13 dBm Ref. : DSCHA2260-QAG3150 - 30 May 13 1/14 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2260-QAG 18-27GHz Low Noise Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +3.5V Symbol Parameter Min Typ Max Unit Freq Frequency range 18 27 GHz Gain Linear Gain ...




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