18-27GHz Low Noise Amplifier
UMS A368687A YYWWG
CHA2260-QAG
UMS A366878A YYWWG
18-27GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD le...
Description
UMS A368687A YYWWG
CHA2260-QAG
UMS A366878A YYWWG
18-27GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA2260-QAG is a low noise amplifier monolithic circuit, which integrates 3-stages self biased. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length. It is supplied in RoHS compliant SMD package.
YAYU3WY6MYA68WUW278SMYW2AA6YSGU30W6M68W78SAG
NF (dB)
UMS A368687A YYWWG
Main Features
■ Broadband performance: 18-27GHz ■ 26dB Gain ■ 2.2dB Noise Figure ■ 13dBm Pout ■ 23dBm Output IP3 ■ DC bias: Vd=3.5Volt@Id=65mA ■ 16L-QFN3x3 ■ MSL1
Noise Figure
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
3.0 V
3.5 V
1.2 20 21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB comp.
Min Typ Max Unit 18 27 GHz
26 dB 2.2 dB 13 dBm
Ref. : DSCHA2260-QAG3150 - 30 May 13
1/14 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA2260-QAG
18-27GHz Low Noise Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +3.5V
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
18 27 GHz
Gain Linear Gain
...
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