CHA2069-FAA

CHA2069-FAA 16-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA2069-FAA is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is proposed in leadless surface mount hermetic metal ceramic 6x6mm² package. The overall power supply is of 4.5V/55mA. The circuit is dedicated to space applications and also well suited for a wide range of microwave and millimetre wave applications and systems. UMS A2069 YYWW Main Features ■ Broadband performance 16-32GHz ■ 2.5dB typical Noise Figure ■ 20dBm 3rd order intercept point ■ 22dB gain ■ Low DC power consumption ■ 6x6mm² metal ceramic hermetic package Linear Gain 30 25 20 15 10 5 0 10 +25 C -40 C +85 C 15 20 25 30 Frequency (GHz) 35 40 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 16 32 GHz NF Noise figure 2.5 dB G Small signal Gain 22 dB ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSCHA2069-FAA2356 - 21 Dec 12 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-FAA 16-32GHz Low Noise Ampl...