CHA2069-99F
18-31GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The circuit is a three-stage self biased wide band monolithic low noise amplifier.
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in chip form.
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