MDS1521

MDS1521 – Single N-Channel Trench MOSFET 30V MDS1521 Single N-channel Trench MOSFET 30V, 28.2A, 4.0mΩ General Description The MDS1521 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1521 is suitable for DC/DC converter and general purpose applications. Features VDS = 30V ID = 28.2A @VGS = 10V RDS(ON) < 4.0mΩ @VGS = 10V < 5.5mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case June. 2011. Version 1.2 1 D G S Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating 30 ±20 28.2 22.6 18.8(3) 15.1(3) 40 5.6 3.6 2.5(3) 1.6(3) 223 -55~150 Unit V V A A W mJ oC Symbol RθJA RθJC Rating 50 22 Unit oC/W MagnaChip Semiconductor Ltd. MDS1521 – Single N-Channel Trench MOSFET 30V Ordering Information Part Number MDS1521URH Temp. Range -55~150oC Package SOIC-8 Packing Tape & Reel Quantity 3000 units Rohs Status Halogen Free Electrical Characteristics (TJ = 25oC) Characteristics Static Characteristics Drain-Source Breakdo...