Document
TO-220F
BYC30X-600P
Hyperfast power diode
4 February 2013
Product data sheet
1. General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
• Isolated plastic package • Low leakage current • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET or IGBT
3. Applications
• Active PFC in air conditioner • Continuous Current Mode (CCM) Power Factor Correction (PFC) • Half-bridge/full-bridge switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
IF(AV)
average forward current
δ = 0.5 ; Th ≤ 51 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3
Static characteristics
VF
forward voltage
IF = 30 A; Tj = 150 °C; Fig. 6
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs; Tj = 25 °C; Fig. 7
Min Typ Max Unit - - 600 V - - 30 A
- 1.38 1.8 V - - 35 ns
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5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A anode mb n.c. mounting base; isolated
Simplified outline
mb
BYC30X-600P
Hyperfast power diode
Graphic symbol
KA 001aaa020
12
TO-220F (SOD113)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BYC30X-600P
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 "full pack"
Version SOD113
7. Marking
Table 4. Marking codes Type number BYC30X-600P
Marking code BYC30X-600P
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
VRWM
crest working reverse voltage
VR reverse voltage
DC
IF(AV)
average forward current
δ = 0.5 ; Th ≤ 51 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3
IFRM repetitive peak forward current δ = 0.5 ; tp = 25 µs; Th ≤ 51 °C; squarewave pulse
BYC30X-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 February 2013
Min Max Unit - 600 V - 600 V - 600 V - 30 A
- 60 A
© NXP B.V. 2013. All rights reserved
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NXP Semiconductors
BYC30X-600P
Hyperfast power diode
Symbol IFSM
Tstg Tj
90 Ptot (W)
60
30
Parameter non-repetitive peak forward current
storage temperature junction temperature
Conditions
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4
Min Max Unit - 200 A
- 220 A
-65 175 °C - 175 °C
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δ=1
0.5
0.2 0.1
60 Ptot (W)
40
20
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a = 1.57
1.9 2.2 2.8
4.0
0 0 10 20 30 40 50 IF(AV) (A)
Fig. 1.
Forward power dissipation as a function of average forward current; square waveform; maximum values
0 0 10 20 30 IF(AV) (A)
Fig. 2.
Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values
40
IF(AV) (A)
30
51 °C
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104
IFSM (A)
103
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20
10
0 -50 0 50 100 150 200
Th (°C)
Fig. 3. Forward current as a function of heatsink temperature; maximum values
102 IF IFSM
10 10-5
10-4
tp t Tj(init) = 25 °C max
10-3
tp (s)
10-2
Fig. 4.
Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values
BYC30X-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 February 2013
© NXP B.V. 2013. All rights reserved
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NXP Semiconductors
BYC30X-600P
Hyperfast power diode
9. Thermal characteristics
Table 6. Symbol Rth(j-h)
Rth(j-a)
Thermal characteristics Parameter
thermal resistance from junction to heatsink
thermal resistance from junction to ambient free air
Conditions with heatsink compound ; Fig. 5
10 Zth(j-h) (K/W)
1
Min Typ Max Unit - - 3.5 K/W - 55 - K/W
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10-1 δ = 0.5
δ = 0.3 10-2 δ = 0.1
δ = 0.05
δ = 0.02 10-3 δ = 0.01
P
tp δ= T
10-4 10-6
10-5
single pulse
10-4
10-3
10-2
10-1
tp T
1 tp (s)
t 10
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 7. Isolation characteristics
Symbol
Parameter
Conditions
Visol(RMS)
RMS isolation voltage
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free
Cisol isolation capacitance f = 1 MHz ; from cathode to external heatsink
Min Typ Max Unit - - 2500 V
- 10 - pF
11. Characteristics
Table 8. Characteristics
Symbol
Parameter
Static characteristics
VF forward voltage
BYC30X-600P
Product data sheet
Conditions
IF = 30 A; Tj = 25 °C; Fig. 6
All information provided in this document is subject to legal disclaimers.
4 February 2013
Min Typ Max Unit
- 2 2.75 V
© NXP B.V. 2013. All rights reserved
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NXP Semiconductors
BYC30X-600P
Hyperfast power diode
Symbol
Parameter
Conditions
IF = 30 A; Tj = 150 °C; Fig. 6
IR
reverse curre.