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BYC30X-600P Dataheets PDF



Part Number BYC30X-600P
Manufacturers NXP
Logo NXP
Description Hyperfast power diode
Datasheet BYC30X-600P DatasheetBYC30X-600P Datasheet (PDF)

TO-220F BYC30X-600P Hyperfast power diode 4 February 2013 Product data sheet 1. General description Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits • Isolated plastic package • Low leakage current • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET or IGBT 3. Applications • Active PFC in air conditioner • Continuous Current Mode (CCM) Power Factor Correction (PFC) • Half-bridge/full-bridge switc.

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TO-220F BYC30X-600P Hyperfast power diode 4 February 2013 Product data sheet 1. General description Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits • Isolated plastic package • Low leakage current • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET or IGBT 3. Applications • Active PFC in air conditioner • Continuous Current Mode (CCM) Power Factor Correction (PFC) • Half-bridge/full-bridge switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; Th ≤ 51 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 Static characteristics VF forward voltage IF = 30 A; Tj = 150 °C; Fig. 6 Dynamic characteristics trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs; Tj = 25 °C; Fig. 7 Min Typ Max Unit - - 600 V - - 30 A - 1.38 1.8 V - - 35 ns Scan or click this QR code to view the latest information for this product NXP Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A anode mb n.c. mounting base; isolated Simplified outline mb BYC30X-600P Hyperfast power diode Graphic symbol KA 001aaa020 12 TO-220F (SOD113) 6. Ordering information Table 3. Ordering information Type number Package Name BYC30X-600P TO-220F Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 "full pack" Version SOD113 7. Marking Table 4. Marking codes Type number BYC30X-600P Marking code BYC30X-600P 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM repetitive peak reverse voltage VRWM crest working reverse voltage VR reverse voltage DC IF(AV) average forward current δ = 0.5 ; Th ≤ 51 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 IFRM repetitive peak forward current δ = 0.5 ; tp = 25 µs; Th ≤ 51 °C; squarewave pulse BYC30X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 4 February 2013 Min Max Unit - 600 V - 600 V - 600 V - 30 A - 60 A © NXP B.V. 2013. All rights reserved 2/9 NXP Semiconductors BYC30X-600P Hyperfast power diode Symbol IFSM Tstg Tj 90 Ptot (W) 60 30 Parameter non-repetitive peak forward current storage temperature junction temperature Conditions tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 Min Max Unit - 200 A - 220 A -65 175 °C - 175 °C 003aak738 δ=1 0.5 0.2 0.1 60 Ptot (W) 40 20 003aak739 a = 1.57 1.9 2.2 2.8 4.0 0 0 10 20 30 40 50 IF(AV) (A) Fig. 1. Forward power dissipation as a function of average forward current; square waveform; maximum values 0 0 10 20 30 IF(AV) (A) Fig. 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values 40 IF(AV) (A) 30 51 °C 003aak740 104 IFSM (A) 103 003aak741 20 10 0 -50 0 50 100 150 200 Th (°C) Fig. 3. Forward current as a function of heatsink temperature; maximum values 102 IF IFSM 10 10-5 10-4 tp t Tj(init) = 25 °C max 10-3 tp (s) 10-2 Fig. 4. Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values BYC30X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 4 February 2013 © NXP B.V. 2013. All rights reserved 3/9 NXP Semiconductors BYC30X-600P Hyperfast power diode 9. Thermal characteristics Table 6. Symbol Rth(j-h) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to heatsink thermal resistance from junction to ambient free air Conditions with heatsink compound ; Fig. 5 10 Zth(j-h) (K/W) 1 Min Typ Max Unit - - 3.5 K/W - 55 - K/W 003aak764 10-1 δ = 0.5 δ = 0.3 10-2 δ = 0.1 δ = 0.05 δ = 0.02 10-3 δ = 0.01 P tp δ= T 10-4 10-6 10-5 single pulse 10-4 10-3 10-2 10-1 tp T 1 tp (s) t 10 Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse duration 10. Isolation characteristics Table 7. Isolation characteristics Symbol Parameter Conditions Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free Cisol isolation capacitance f = 1 MHz ; from cathode to external heatsink Min Typ Max Unit - - 2500 V - 10 - pF 11. Characteristics Table 8. Characteristics Symbol Parameter Static characteristics VF forward voltage BYC30X-600P Product data sheet Conditions IF = 30 A; Tj = 25 °C; Fig. 6 All information provided in this document is subject to legal disclaimers. 4 February 2013 Min Typ Max Unit - 2 2.75 V © NXP B.V. 2013. All rights reserved 4/9 NXP Semiconductors BYC30X-600P Hyperfast power diode Symbol Parameter Conditions IF = 30 A; Tj = 150 °C; Fig. 6 IR reverse curre.


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