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NTP30N06

ON Semiconductor

Power MOSFET

NTP30N06, NTB30N06 Power MOSFET 30 Amps, 60 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switc...


ON Semiconductor

NTP30N06

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Description
NTP30N06, NTB30N06 Power MOSFET 30 Amps, 60 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Pb−Free Packages are Available Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C VDSS 60 Vdc VDGR 60 Vdc Vdc VGS "20 VGS "30 ID 27 Adc ID 15 IDM 80 Apk PD 88.2 W 0.59 W/°C Operating and Storage Temperature Range TJ, Tstg −55 to °C +175 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH IL(pk) = 26 A, VDS = 60 Vdc) EAS 101 mJ Thermal Resistance, Junction−to−Case RqJC 1.7 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be a...




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