PMBD354

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD354 Schottky barrier double diode Product data sheet Supersedes data of 2002 Aug 06 2003 Mar 25 NXP Semiconductors Schottky barrier double diode Product data sheet PMBD354 FEATURES Low forward voltage Small SMD package Low capacitance Matched capacitance. PINNING PIN DESCRIPTION 1 cathode k1 2 anode a2 3 common connection a1, k2 APPLICATIONS UHF mixer Sampling circuits Modulators Phase detection. handbook, 2 columns 3 handbook, 2 columns 3 DESCRIPTION Planar Schottky barrier double diode in a SOT23 small plastic SMD package. MARKING TYPE NUMBER PMBD354 MARKING CODE(1) *V8 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. 1 Top view 2 MGC421 1 2 MGC487 Fig.1 Simplified outline (SOT23) pin configuration and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per diode VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature MIN. MAX. UNIT −4V − 30 mA −65 +150 °C − 100 °C 2003 Mar 25 2 NXP Semiconductors Schottky barrier double diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER Per diode VF forward voltage IR reverse current Cd diode capacitance ΔCd capacitance matching Note 1. Pulse test: tp = 300 μs; δ = 0.02. CONDITIONS see Fig.2 IF = 0.1 mA IF = 1 mA IF = 10 mA VR = 3 V; note...