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NXPSC06650

NXP

Silicon Carbide Diode

TO-220AC NXPSC06650 Silicon Carbide Diode 4 May 2015 Product data sheet 1. General description Silicon Carbide Schott...


NXP

NXPSC06650

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TO-220AC NXPSC06650 Silicon Carbide Diode 4 May 2015 Product data sheet 1. General description Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits Highly stable switching performance High forward surge capability IFSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Applications Power factor correction Telecom/Server SMPS UPS PV inverter PC Silverbox LED/OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5; Tmb ≤ 124 °C; square-wave pulse; Fig. 1; Fig. 2 Tj junction temperature Static characteristics VF forward voltage IF = 6 A; Tj = 25 °C; Fig. 4 Min Typ Max Unit - - 650 V - - 6A - - 175 °C - 1.5 1.7 V Scan or click this QR code to view the latest information for this product NXP Semiconductors NXPSC06650 Silicon Carbide Diode Symbol Parameter Dynamic characteristics Qr recovered charge Conditions IF = 6 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; Fig. 5 Min Typ Max Unit - 10 - nC 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 K cathode mb 2 A anode mb mb mounting base; connected to cathode Graphic sy...




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