TO-220AC
NXPSC06650
Silicon Carbide Diode
4 May 2015
Product data sheet
1. General description
Silicon Carbide Schott...
TO-220AC
NXPSC06650
Silicon Carbide Diode
4 May 2015
Product data sheet
1. General description
Silicon Carbide
Schottky diode in a SOD59A (TO-220AC) plastic package, designed for high frequency switched-mode power supplies.
2. Features and benefits
Highly stable switching performance High forward surge capability IFSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant
3. Applications
Power factor correction Telecom/Server SMPS UPS PV inverter PC Silverbox LED/OLED TV Motor Drives
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
IF(AV)
average forward current
δ = 0.5; Tmb ≤ 124 °C; square-wave pulse; Fig. 1; Fig. 2
Tj junction temperature
Static characteristics
VF
forward voltage
IF = 6 A; Tj = 25 °C; Fig. 4
Min Typ Max Unit - - 650 V - - 6A - - 175 °C
- 1.5 1.7 V
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NXP Semiconductors
NXPSC06650
Silicon Carbide Diode
Symbol
Parameter
Dynamic characteristics
Qr recovered charge
Conditions
IF = 6 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; Fig. 5
Min Typ Max Unit - 10 - nC
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 K cathode
mb
2 A anode
mb mb mounting base; connected to cathode
Graphic sy...