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UT3458

Unisonic Technologies

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UT3458 4.1A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT3458 is N-channel enhance...


Unisonic Technologies

UT3458

File Download Download UT3458 Datasheet


Description
UNISONIC TECHNOLOGIES CO., LTD UT3458 4.1A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT3458 is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. This device can be operated with 4.5V low gate voltage.  FEATURES * RDS(ON) ≤ 0.1 Ω @ VGS=10V, ID=3.2A RDS(ON) ≤ 0.128 Ω @ VGS=4.5V, ID=2.8A  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT3458L-AB3-R UT3458G-AB3-R SOT-89 UT3458L-AE3-R UT3458G-AE3-R SOT-23 UT3458L-AG6-R UT3458G-AG6-R SOT-26 Note: Pin Assignment: G: Gate S: Source D: Drain Pin Assignment 123456 Packing G D S - - - Tape Reel G S D - - - Tape Reel D D G S D D Tape Reel  MARKING SOT-89 SOT-23 34EU L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd SOT-26 654 34EU 123 L: Lead Free G: Halogen Free 1 of 6 QW-R502-578.I UT3458 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 60 V VGSS ±20 V Drain Current Continuous TA=25°C (Note 2, 3) TA=70°C ID 4.1 A 3.2 A Pulsed IDM SOT-89 15 A 3.3 W Power Dissipation (Note 2, 3) SOT-23 PD SOT-26 3.1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. ...




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