IPB240N03S4L-R9

IPB240N03S4L-R9 OptiMOS™-T Power-Transistor Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Product Summary V DS R DS(on) ID 30 V 0.92 mW 240 A PG-TO263-7-3 Type IPB240N03S4L-R9 Package PG-TO263-7-3 Marking 4N03LR9 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=120 A Avalanche current, single pulse I AS - Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 240 240 960 750 190 ±16 231 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.1 page 1 2014-04-28 IPB240N03S4L-R9 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 0.65 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Drain-source on-state resistance V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS I GSS...