BSS84Z

UNISONIC TECHNOLOGIES CO., LTD BSS84Z -0.13A, -50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-23-3 SMD package, and in most applications they require up to -0.13A DC and can deliver current up to -0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch.  FEATURES * RDS(ON) ≤ 10 Ω @ VGS=-4.5V, ID=-0.1A  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free BSS84ZL-AE2-R BSS84ZG-AE2-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 Pin Assignment 1 2 3 G S D Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-719.F BSS84Z Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS -50 V VGSS ±20 V Continuous Drain Current DC Pulse ID -0.13 -0.52 A A Power Dissipation Junction Temperature PD 0.3 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER SYMBOL RATINGS Junction to Ambient θJA 416 (Note) Note: Device mounted on FR-4 substrate PC board, 2oz ...