N-CHANNEL POWER MOSFET
9N70
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
9A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 9N70 is a high ...
Description
9N70
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
9A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 9N70 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.
FEATURES
* RDS(ON) <1.3Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 10 pF) * High switching Speed * 100% avalanche tested * Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
9N70L-TA3-T
9N70G-TA3-T
9N70L-TF3-T
9N70G-TF3-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F
Pin Assignment 123 GDS GDS
Packing
Tube Tube
www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-617.b
9N70
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 700 V
Gate-Source Voltage
VGSS ±30 V
Drain Current
Continuous TC=25°C VGS @ 10V TC=100°C
ID
9A 5A
Pulsed (Note 2)
IDM
40 A
Avalanche Current
Avalanche Energy
Single Pulsed (Note 3) Repetitive
Power Dissipation (TC=25°C)
TO-220 TO-220F
IAR EAS EAR
PD
9A
305 mJ
9 mJ
156 44
W
Linear Derating Factor
1.25 W/°C
Junction Temperature Storage Temperature
TJ TSTG
+150 -55~+150
°C °C
Notes: 1. Absolute maximum ratings are those va...
Similar Datasheet