DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 10NN15
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC 10NN15 is a Dua...
Description
UNISONIC TECHNOLOGIES CO., LTD 10NN15
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC 10NN15 is a Dual N-channel enhancement mode power MOSFET using UTC’s perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
FEATURES
* High switching speed * Low Gate Charge * Simple Drive Requirement
SYMBOL
Power MOSFET
SOP-8
ORDERING INFORMATION
Ordering Number
10NN15G-S08-R Note: Pin Assignment: G: Gate D: Drain
Package
SOP-8 S: Source
Pin Assignment 1 2 3 4 5, 6 7, 8 S1 G1 S2 G2 D2 D1
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-565.D
10NN15
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
150
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous (Note 3) Pulsed (Note 2)
ID IDM
3 12
A A
Power Dissipation
PD 2 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by Max. junction temperature.
3. Surface mounted on 1in2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on Min. copper pad.
THERMAL CHARACTERISTICS
PARAMETER Junction to Ambient (Note 3)
S...
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