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1SV315

Sanyo Semicon Device

Silicon Epitaxial Pin Diode

Ordering number:ENN6261 Silicon Epitaxial Pin Diode 1SV315 Variabe resistance Attenuator Use Features · Ultrasmall-siz...


Sanyo Semicon Device

1SV315

File Download Download 1SV315 Datasheet


Description
Ordering number:ENN6261 Silicon Epitaxial Pin Diode 1SV315 Variabe resistance Attenuator Use Features · Ultrasmall-sized package facilitates high-density mounting and permits 1SV315-applied equipment to be made smaller. · Small interterminal capacitance (C=0.23pF typ). Electrical Connection Cathode / Anode 3 Package Dimensions unit:mm 1246A [1SV315] 0.425 0.15 3 2.1 1.250 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 1 Anode 2 Cathode Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Reverse Voltage Forward Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VR IF P Tj Tstg Conditions 1 : Anode 2 : Cathode 3 : Cathode/Anode SANYO : MCP Ratings 50 50 100 125 –55 to +125 0.2 0.3 Unit V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Reverse Current Forward Voltage Interterminal Capacitance Series Resistance Symbol VR IR VF C rs IR=10µA VR=50V IF=50mA VR=50V, f=1MHz IF=10µA, f=100MHz IF=10mA, f=100MHz 4 Conditions Ratings min 50 0.1 0.95 0.23 2400 6 9 1.0 typ max Unit V µA V pF Ω Ω Note ) The specifications shown above are for each individual diode. Marking : UV Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or materia...




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