Diode
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV314
1SV314
VCO for UHF Band Radio
z High Capacitance Ratio : C0.5 V / C...
Description
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV314
1SV314
VCO for UHF Band Radio
z High Capacitance Ratio : C0.5 V / C2.5 V = 2.5 (Typ.) z Low Series Resistance : rs = 0.35 Ω (Typ.) z Useful for Small Size Tuner
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage Junction Temperature Storage Temperature Range
VR 10 V
Tj 125 °C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
JEDEC
—
JEITA
—
TOSHIBA
1−1G1A
Weight:0.0014g (typ.)
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
Reverse Voltage Reverse Current Capacitance Capacitance
Capacitance Ratio
Series Resistance
SYMBOL
TEST CONDITION
VR IR C0.5 V C2.5 V C0.5 V / C2.5 V rs
IR = 1μA VR = 10 V VR = 0.5 V, f = 1 MHz VR = 2.5 V, f = 1 MHz
—
VR = 1 V, f = 470 MHz
Marking
MIN TYP. MAX UNIT
10 — —
V
— — 3 nA
7.3 — 8.4 pF
2.75 — 3.4 pF
2.4 2.5
—
—
— 0.35 0.45 Ω
1 2007-11-01
1SV314
2 ...
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