BUK963R2-40B

D2PAK BUK963R2-40B N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 3. Applications 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2; Fig. 3 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11; Fig. 12 Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 25 A; VDS = 32 V; Tj = 25 °C; Fig. 13 [1] Min Typ Max Unit - - 40 V - - 100 A - - 300 W - 2.4 2.8 mΩ - 2.7 3.2 mΩ - 37 - nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK963R2-40B N-channel TrenchMOS logic level FET Symbol Parameter Avalanche ruugedness EDS(AL)S non-repetitive drainsource...