20PT

SEMICONDUCTOR 20PT Series RRooHHSS Stansard SCRs, 20A Main Features Symbol IT(RMS) VDRM/VRRM IGT Value 20 600 to 1000 3 to 25 Unit A V mA A KAG K AG TO-220AB (Non-lnsulated) (20PTxxA) TO-220AB (lnsulated) (20PTxxAI) DESCRIPTION The 20PT series of silicon controlled rectifiers are high performance glass passivated technology, and are suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. A KA G TO-263 (D2PAK) (20PTxxH) 2(A) 3(G) 1(K) ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RMS on-state current full sine wave (180° conduction angle ) IT(RMS) Average on-state current (180° conduction angle) IT(AV) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns Peak gate current Maximum gate power Average gate power dissipation Repetitive peak off-state voltage Repetitive peak reverse voltage Storage temperature range Operating junction temperature range ITSM I2t dI/dt IGM PGM PG(AV) VDRM VRRM Tstg Tj TEST CONDITIONS TO-263/TO-220AB TO-220AB insulated TO-263/TO-220AB TO-220AB insulated F =50 Hz F =60 Hz tp = 10 ms TC=100°C TC=80°C TC=100°C TC=80°C t = 20 ms t = 16.7 ms F = 60 Hz Tj = 125ºC Tp = 20 µs Tp =20µs Tj =125ºC Tj = 125ºC Tj = 125ºC Tj =125ºC VALUE 20 13 200 220 200 50 4 10 1 600 to 1000 - 40 to + 150 - 40 to + 125 UNIT A A A A2s A/µs A W W V ºC www.nellsemi....