Sensitive gate SCRs
SEMICONDUCTOR
1PT Series RRooHHSS
Sensitive gate SCRs, 1A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
DESCRIPTION
Va...
Description
SEMICONDUCTOR
1PT Series RRooHHSS
Sensitive gate SCRs, 1A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
DESCRIPTION
Value 1
600 to 800 10 to 200
Unit A V µA
Thanks to highly sensitive triggering levels, the 1PT series is suitable for all applications where the available
gate current is limited, such as capacitive discharge
ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies among others. Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area.
TO-92 (1PTxxE)
A G K
3(A)
2(G) 1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave (180° conduction angle )
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns Peak gate current Forward peak gate power Average gate power dissipation Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
SYMBOL IT(RMS)
TEST CONDITIONS Tc =85ºC
VALUE 1
UNIT A
IT(AV)
ITSM
I2t
dI/dt IGM PGM PG(AV) VDRM VRRM Tstg Tj
Tc =85ºC
F =50 Hz F =60 Hz
t = 20 ms t = 16.7 ms tp = 10 ms
F = 60 Hz
Tj = 110ºC
Tp = 20 µs
Tj = 110ºC
TA=25°C, Pulse width≤0.1µs
Tj =110ºC
Tj =25ºC
0.6
12 13 0.72
50 0.5 0.5 0.1
600 and 800
- 40 to + 150 - 40 to + 110
A
A A2s A/µs A W W V
ºC
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