Document
Ordering number : EN6006A
CPH3101
Bipolar Transistor
–30V, –2A, Low VCE(sat), PNP Single CPH3
http://onsemi.com
Applications
• Relay drivers, lamp drivers, motor drivers, flash
Features
• Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim • High allowable power dissipation
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature
VCBO VCEO VEBO IC ICP IB PC Tj
Storage Temperature
Tstg
Conditions When mounted on ceramic substrate (600mm2×0.8mm)
Ratings --30 --30 --6 --2 --4
--400 0.9 150
--55 to +150
Unit V V V A A mA W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7015A-003
2.9 3
CPH3101-TL-E
0.15
Product & Package Information
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
0.9 2.8 0.2 0.6 1.6 0.6 0.2
AA
LOT No.
1 0.95
2 0.4
0.05
1 : Base 2 : Emitter 3 : Collector CPH3
TL
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013 September, 2013
D0512 TKIM TC-00002846/40599TS (KOTO) TA-1594 No.6006-1/6
CPH3101
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time
ICBO IEBO hFE fT Cob
VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf
VCB= --20V, IE=0A VEB= --3V, IC=0A VCE= --2V, IC= --100mA VCE= --10V, IC= --50mA VCB= --10V, f=1MHz IC= --1.5A, IB= --75mA IC= --1.5A, IB= --75mA IC= --10μA, IE=0A IC= --1mA, RBE=∞ IC= --10μA, IC=0A
See specified Test Circuit.
Switching Time Test Circuit
INPUT PW=20μs D.C.≤1%
50Ω
VR
IB1 IB2
1kΩ + 100μF
OUTPUT
+ 470μF
RL
VBE=5V
VCC= --12V
IC=20IB1= --20IB2= --500mA
Ratings min typ
200 150 32
--350 --0.85 --30 --30 --6
60 350
25
max --0.1 --0.1 400
--600 --1.2
Unit
μA μA
MHz pF mV V V V V ns ns ns
Ordering Information
Device CPH3101-TL-E
Package CPH3
Shipping 3,000pcs./reel
memo Pb Free
Collector Current, IC -- A --250mA --50mA
Collector Current, IC -- A
--2.0
--1.8 --100mA
--1.6
--150mA --200mA
--1.4
--1.2
--1.0
IC -- VCE
--40mA
--30mA--20mA
--10mA --8mA --6mA
--0.8
--4mA
--0.6
--0.4 --2mA
--0.2 0 0
IB=0
--.