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1SV305 Dataheets PDF



Part Number 1SV305
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description VARIABLE CAPACITANCD DIODE
Datasheet 1SV305 Datasheet1SV305 Datasheet (PDF)

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV305 1SV305 VCO for VHF Band Radio • Small package • High capacitance ratio: C1 V/C4 V = 3.0 (typ.) • Low series resistance: rs = 0.27 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and .

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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV305 1SV305 VCO for VHF Band Radio • Small package • High capacitance ratio: C1 V/C4 V = 3.0 (typ.) • Low series resistance: rs = 0.27 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 0.0014 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol Test Condition VR IR C1 V C4 V C1 V/C4 V rs IR = 1 μA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ⎯ VR = 1 V, f = 470 MHz Marking Min Typ. Max Unit 10 ⎯ ⎯ ⎯⎯ 3 17.3 18.3 19.3 5.3 6.1 6.6 2.8 3 ⎯ ⎯ 0.27 0.32 V nA pF pF ⎯ Ω 1 2007-11-01 1SV305 (Note) Note: δC = C (Ta) − C C (25) (25) × 100 (%) 2 2007-11-01 1SV305 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely re.


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