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1SV304

Toshiba Semiconductor

Variable Capacitance Diode


Description
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV304 1SV304 VCO for VHF Band Radio Small package High capacitance ratio: C1 V/C4 V = 3.0 (typ.) Low series resistance: rs = 0.27 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 1...



Toshiba Semiconductor

1SV304

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