IRFP7718PBF

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters  D G S Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant G Gate IR MOSFET StrongIRFET™ IRFP7718PbF HEXFET® Power MOSFET VDSS RDS(on) typ. max ID (Silicon Limited) ID (Package Limited) 75V 1.45m 1.80m 355A 195A D G DS TO-247AC D Drain S Source Base part number Package Type IRFP7718PbF TO-247 Standard Pack Form Quantity Tube 25 Orderable Part Number IRFP7718PbF RDS(on), Drain-to -Source On Resistance (m) ID, Drain Current (A) 6 ID = 100A 4 TJ = 125°C 2 TJ = 25°C 0 4 8 12 16 20 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 400 Limited By Package 300 200 100 0 25 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 2. Maximum Drain Current vs. Case Temperature 1 2015-11-30   IRFP7718PbF Absolute Maximium Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond L...