IRFP7530PBF

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters StrongIRFET™ IRFP7530PbF HEXFET® Power MOSFET   D VDSS 60V RDS(on) typ. 1.65m G max 2.00m ID (Silicon Limited) 281A S ID (Package Limited) 195A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant G Gate G DS TO-247 IRFP7530PbF D Drain S Source Base part number Package Type IRFP7530PbF TO-247 Standard Pack Form Quantity Tube 25 Orderable Part Number IRFP7530PbF RDS(on), Drain-to -Source On Resistance (m) ID, Drain Current (A) 7 ID = 100A 6 5 4 TJ = 125°C 3 2 TJ = 25°C 1 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com © 2014 International Rectifier 300 250 Limited by package 200 150 100 50 0 25 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback November 7, 2014   IRFP7530PbF Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuo...